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| 2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA). IC =-0.8A. Complements the 2SD1781. PACKAGE DIMENSIONS 1 Base SOT-23 3 Collector Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 2 Emitter A L 3 H K BS 2 J J K C Top View 1 L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings -40 -32 -5 -800 200 +150, -55 ~ +150 Unit V V V mA mW CHARACTERISTICS at Ta = 25C Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT COB Min. -40 -32 -5 82 50 - Typ. 200 12 Max. -0.5 -0.5 -0.5 390 30 Unit V V V uA uA V IC=-50uA, IE = 0 IC=-1mA, IB = 0 IE=-50uA, IC = 0 VCB=-20V, IE = 0 VEB= -4 V, IC = 0 Test Conditions IC=-500mA, IB=-50mA VCE=-3V, IC=-100mA MHz pF VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE1 Rank Range Marking P 82 - 180 AHP Q 120 - 270 AHQ R 180 - 390 AHR 01-June-2005 Rev. B Page 1 of 2 2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. B Page 2 of 2 |
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